Method of fabricating semiconductor device

ABSTRACT

A method of fabricating a semiconductor device includes pattering an upper portion of a substrate to form a first active pattern, the substrate including a semiconductor element having a first lattice constant, performing a selective epitaxial growth process on an upper portion of the first active pattern to form a first source/drain region, doping the first source/drain region with gallium, performing an annealing process on the first source/drain region doped with gallium, and forming a first contact pattern coupled to the first source/drain region. The first source/drain region includes a semiconductor element having a second lattice constant larger than the first lattice constant.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation of U.S. application Ser. No. 15/793,442 filed onOct. 25, 2017, which claims priority under 35 U.S.C. § 119 to KoreanPatent Application No. 10-2017-0043122, filed on Apr. 3, 2017, in theKorean Intellectual Property Office, the entire contents of which arehereby incorporated by reference.

BACKGROUND OF THE INVENTION

The present disclosure relates to a method of fabricating asemiconductor device, and in particular, to a method of fabricating asemiconductor device including a field effect transistor.

Due to their small-sized, multifunctional, and/or low-costcharacteristics, semiconductor devices are being esteemed as importantelements in the electronic industry. The semiconductor devices may beclassified into a memory device for storing data, a logic device forprocessing data, and a hybrid device including both of memory and logicelements. To meet the increased demand for electronic devices with fastspeed and/or low power consumption, it is important to realizesemiconductor devices with high reliability, high performance, and/ormultiple functions. To satisfy these technical criteria, complexityand/or integration density of semiconductor devices are being increased.

SUMMARY

Some embodiments of the present disclosure provide a method offabricating a semiconductor device, in which a field effect transistorwith improved electric characteristics is provided.

According to some embodiments of the present disclosure, a method offabricating a semiconductor device may include pattering an upperportion of a substrate to form a first active pattern, the substrateincluding a semiconductor element having a first lattice constant,performing a selective epitaxial growth process on an upper portion ofthe first active pattern to form a first source/drain region, doping thefirst source/drain region with gallium, performing an annealing processon the first source/drain region doped with gallium, and forming a firstcontact pattern coupled to the first source/drain region. The firstsource/drain region may include a semiconductor element having a secondlattice constant larger than the first lattice constant.

According to some embodiments of the present disclosure, a method offabricating a semiconductor device may include forming a first deviceisolation layer on a PMOSFET region of a substrate to define a firstactive pattern, an upper portion of the first active pattern verticallyprotruding above the device isolation layer, forming a gate electrode tocross the first active pattern, performing a selective epitaxial growthprocess on the first active pattern adjacent to a side of the gateelectrode to form a first source/drain region, doping the firstsource/drain region with gallium, performing an annealing process on thefirst source/drain region doped with gallium, and forming a firstcontact pattern coupled to the first source/drain region.

According to some embodiments of the present disclosure, a semiconductordevice may include a first active pattern on a PMOSFET region of asubstrate, the substrate including a semiconductor element having afirst lattice constant, a gate electrode crossing the first activepattern and extending in a first direction, a first source/drain regionprovided in the first active pattern at a side of the gate electrode,and a first contact pattern coupled to the first source/drain region.The first source/drain region may include a semiconductor element havinga second lattice constant larger than the first lattice constant, anupper portion of the first source/drain region may include gallium (Ga)as an impurity, and a concentration of gallium in the first source/drainregion may decrease in a direction from the contact pattern toward alower portion of the first source/drain region.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the followingbrief description taken in conjunction with the accompanying drawings.The accompanying drawings represent non-limiting, example embodiments asdescribed herein.

FIG. 1 is a plan view illustrating a semiconductor device according tosome embodiments of the present disclosure.

FIGS. 2A to 2D are cross-sectional views taken along lines A-A′, B-B′,C-C′, and D-D′, respectively, of FIG. 1.

FIG. 3 is an enlarged cross-sectional view of a portion M of FIG. 2A.

FIGS. 4, 6, 8, 10, 12, 14, 16, and 18 are plan views illustrating amethod of fabricating a semiconductor device, according to someembodiments of the present disclosure.

FIGS. 5A, 7A, 9A, 11A, 13A, 15A, 17A, and 19A are cross-sectional viewstaken along lines A-A′ of FIGS. 4, 6, 8, 10, 12, 14, 16, and 18,respectively.

FIGS. 5B, 7B, 9B, 11B, 13B, 15B, 17B, and 19B are cross-sectional viewstaken along lines B-B′ of FIGS. 4, 6, 8, 10, 12, 14, 16, and 18,respectively.

FIGS. 7C, 9C, 11C, 13C, 15C, 17C, and 19C are cross-sectional viewstaken along lines C-C′ of FIGS. 6, 8, 10, 12, 14, 16, and 18,respectively.

FIGS. 9D, 11D, 13D, 15D, 17D, and 19D are cross-sectional views takenalong lines C-C′ of FIGS. 8, 10, 12, 14, 16, and 18, respectively.

FIG. 20 is a flow chart of a gallium doping process according to someembodiments of the present disclosure.

FIG. 21 is a plan view illustrating a method of fabricating asemiconductor device according to some embodiments of the presentdisclosure.

FIGS. 22A to 22D are cross-sectional views taken along lines A-A′, B-B′,C-C′, and D-D′, respectively, of FIG. 21.

FIG. 23 is a plan view illustrating a method of fabricating asemiconductor device according to some embodiments of the presentdisclosure.

FIGS. 24A to 24D are cross-sectional views taken along lines A-A′, B-B′,C-C′, and D-D′, respectively, of FIG. 21.

DETAILED DESCRIPTION

The present disclosure now will be described more fully hereinafter withreference to the accompanying drawings, in which various exemplaryembodiments are shown. The invention may, however, be embodied in manydifferent forms and should not be construed as limited to the exemplaryembodiments set forth herein.

It should be noted that the accompanying drawings are intended toillustrate the general characteristics of methods, structure and/ormaterials utilized in certain example embodiments and to supplement thewritten description provided below. These drawings are not, however, toscale and may not precisely reflect the precise structural orperformance characteristics of any given embodiment, and should not beinterpreted as limiting the range of values or properties encompassed byexample embodiments. For example, the relative thicknesses andpositioning of molecules, layers, regions and/or structural elements maybe reduced or exaggerated for clarity. The use of similar or identicalreference numbers in the various drawings is intended to indicate thepresence of a similar or identical element or feature.

Ordinal numbers such as “first,” “second,” “third,” etc. may be usedsimply as labels of certain elements, steps, etc., to distinguish suchelements, steps, etc. from one another. Terms that are not describedusing “first,” “second,” etc., in the specification, may still bereferred to as “first” or “second” in a claim. In addition, a term thatis referenced with a particular ordinal number (e.g., “first” in aparticular claim) may be described elsewhere with a different ordinalnumber (e.g., “second” in the specification or another claim).

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe positional relationships, such as illustrated in the figures,for example. It will be understood that the spatially relative termsencompass different orientations of the device in addition to theorientation depicted in the figures.

Terms such as “same,” “equal,” “planar,” or “coplanar,” as used hereinencompass identicality and near identicality including variations thatmay occur, for example, due to manufacturing processes. The term“substantially” may be used herein to emphasize this meaning, unless thecontext or other statements indicate otherwise.

FIG. 1 is a plan view illustrating a semiconductor device according tosome embodiments of the present disclosure. FIGS. 2A to 2D arecross-sectional views taken along lines A-A′, B-B′, C-C′, and D-D′,respectively, of FIG. 1. FIG. 3 is an enlarged cross-sectional view of aportion M of FIG. 2A.

As used herein, a semiconductor device may refer to a device such as asemiconductor chip (e.g., memory chip and/or logic chip formed on adie), a stack of semiconductor chips, a semiconductor package includingone or more semiconductor chips stacked on a package substrate, or apackage-on-package device including a plurality of packages. Thesedevices may be formed using ball grid arrays, wire bonding, throughsubstrate vias, or other electrical connection elements, and may includememory devices such as volatile or non-volatile memory devices.

Referring to FIGS. 1, 2A to 2D, and 3, a device isolation layer ST maybe provided in an upper portion of a substrate 100. The device isolationlayer ST may include a PMOSFET region PR and an NMOSFET region NR. Thesubstrate 100 may be or include a semiconductor wafer, which is made ofat least one of silicon, germanium, silicon-germanium, or asemiconductor compound. As an example, the substrate 100 may be asilicon wafer. The device isolation layer ST may be formed of or includean insulating material (e.g., silicon oxide). In some embodiments, thesubstrate 100 may include only silicon.

The PMOSFET region PR and the NMOSFET region NR may be spaced apart fromeach other in a first direction D1 parallel to a top surface of thesubstrate 100, and the device isolation layer ST may be interposedbetween the PMOSFET and NMOSFET regions PR and NR. The PMOSFET region PRand the NMOSFET region NR may extend in a second direction D2 crossingthe first direction D1. Although not shown, a bottom level of the deviceisolation layer ST between the PMOSFET and NMOSFET regions PR and NR maybe deeper in a downward direction perpendicular to the top surface ofthe substrate 100 than a bottom level of the device isolation layer STbetween adjacent active patterns AP1 and/or between adjacent activepatterns AP2.

The PMOSFET and NMOSFET regions PR and NR may be logic cell regions, onwhich logic transistors for a logic circuit of a semiconductor devicewill be formed. As an example, logic transistors constituting aprocessor core or I/O terminals may be provided on the logic cell regionof the substrate 100. Some of the logic transistors may be provided onthe PMOSFET and NMOSFET regions PR and NR.

In certain embodiments, the PMOSFET and NMOSFET regions PR and NR may bememory cell regions, on which memory cell transistors for storing dataare provided. For example, memory cell transistors constituting aplurality of static random access memory (SRAM) cells may be provided onthe memory cell region of the substrate 100. Some of the memory celltransistors may be provided on the PMOSFET and NMOSFET regions PR andNR. But the present disclosure is not limited thereto.

A plurality of active patterns AP1 and AP2 extending in the seconddirection D2 may be provided on the PMOSFET region PR and the NMOSFETregion NR. The active patterns AP1 and AP2 may include first activepatterns AP1 on the PMOSFET region PR and second active patterns AP2 onthe NMOSFET region NR. The first and second active patterns AP1 and AP2may be portions of the substrate 100 and may have a protruding shapeprotruding in an upward direction perpendicular to the top surface ofthe substrate 100. The first and second active patterns AP1 and AP2 maybe arranged spaced apart from each other in the first direction D1.

Each adjacent pair of the first active patterns AP1 may be provided todefine a first trench TR1, and each adjacent pair of the second activepatterns AP2 may be provided to define a second trench TR2. Acorresponding device isolation layer ST may be provided to fill each ofthe first trench TR1 and the second trench TR2. For example, shapes ofthe first and second active patterns AP1 and AP2 may be defined by thecorresponding device isolation layer ST. The device isolation layers STmay cover lower side surfaces of each of the first and second activepatterns AP1 and AP2. As shown in the drawings, three first activepatterns AP1 may be provided on the PMOSFET region PR and three secondactive patterns AP2 may be provided on the NMOSFET region NR isillustrated, but the disclosure is not limited thereto.

The first and second active patterns AP1 and AP2 may include upperportions that are located at a higher level in a direction perpendicularto the top surface of the substrate 100 than that of top surfaces of thedevice isolation layers ST. The upper portions of the first and secondactive patterns AP1 and AP2 may have a structure vertically protrudingabove top surfaces of the device isolation layers ST. Each of the upperportions of the first and second active patterns AP1 and AP2 may have aprotruding fin shape between each pair of the device isolation layersST.

First channel regions CH1 and first source/drain regions SD1 may beprovided in upper portions of the first active patterns AP1. The firstsource/drain regions SD1 may be p-type doped regions. Each of the firstchannel regions CH1 may be interposed between a pair of the firstsource/drain regions SD1. Second channel regions CH2 and secondsource/drain regions SD2 may be provided in upper portions of the secondactive patterns AP2. The second source/drain regions SD2 may be n-typedoped regions. Each of the second channel regions CH2 may be interposedbetween a pair of the second source/drain regions SD2.

The first and second source/drain regions SD1 and SD2 may be epitaxialpatterns that are formed by a selective epitaxial growth process. Thefirst and second source/drain regions SD1 and SD2 may have top surfacesthat are positioned at a higher level than those of the first and secondchannel regions CH1 and CH2. The first and second source/drain regionsSD1 and SD2 may include a semiconductor element that is different fromthe substrate 100. As an example, the first source/drain regions SD1 mayinclude a semiconductor material having a lattice constant greater thanthat of the substrate 100. Thus, according to an exemplary embodiment,the first source/drain regions SD1 may exert a compressive stress to thefirst channel regions CH1. As an example, the second source/drainregions SD2 may include a semiconductor material having a latticeconstant equal to or less than that of the substrate 100. Thus,according to an exemplary embodiment, the second source/drain regionsSD2 may exert a tensile stress to the second channel regions CH2. As anexample, the second source/drain regions SD2 may include the samesemiconductor element (e.g., silicon) as that of the substrate 100.

Gate electrodes GE may be provided to cross the first and second activepatterns AP1 and AP2 and to extend in the first direction Dl. The gateelectrodes GE may be spaced apart from each other in the seconddirection D2. Each of the gate electrodes GE may be overlapped with thefirst and second channel regions CH1 and CH2, when viewed in a planview. Each of the gate electrodes GE may be provided to enclose top andtwo opposing side surfaces of each of the first and second channelregions CH1 and CH2 (e.g., see FIG. 2C). As an example, the gateelectrodes GE may be formed of or include at least one of conductivemetal nitrides (e.g., titanium nitride or tantalum nitride) or metals(e.g., titanium, tantalum, tungsten, copper, or aluminum).

A pair of gate spacers GS may be respectively provided on opposite sidesurfaces of each of the gate electrodes GE. The gate spacers GS mayextend along the gate electrodes GE and in the first direction D1. Topsurfaces of the gate spacers GS may be higher than those of the gateelectrodes GE. The top surfaces of the gate spacers GS may be coplanarwith that of a first interlayered insulating layer 140 to be describedbelow. The gate spacers GS may include at least one of SiCN, SiCON, orSiN, for example. In certain embodiments, the gate spacers GS may be amulti-layered structure including at least two of SiCN, SiCON, or SiN.

Gate dielectric patterns GI may be interposed between the gateelectrodes GE and the first and second active patterns AP1 and AP2. Eachof the gate dielectric patterns GI may extend along a bottom surface ofeach of the gate electrodes GE such that the lowermost surface of eachof the gate electrodes GE may be provided at a level higher than thelower most surface of the gate dielectric patterns in a directionperpendicular to a top surface of the substrate 100. Each of the gatedielectric patterns GI may be provided to cover top and two sidesurfaces of each of the first and second channel regions CH1 and CH2.The gate dielectric patterns GI may be formed of or include at least oneof high-k dielectric materials. As an example, the high-k dielectricmaterial may be formed of or include at least one of hafnium oxide,hafnium silicon oxide, lanthanum oxide, zirconium oxide, zirconiumsilicon oxide, tantalum oxide, titanium oxide, barium strontium titaniumoxide, barium titanium oxide, strontium titanium oxide, lithium oxide,aluminum oxide, lead scandium tantalum oxide, or lead zinc niobate.

A gate capping pattern GP may be provided on each of the gate electrodesGE. The gate capping patterns GP may extend along the gate electrodes GEor in the first direction D1. The gate capping patterns GP may be formedof or include a material, which is selected to have an etch selectivitywith respect to first and second interlayered insulating layers 140 and150 to be described below. For example, the gate capping patterns GP maybe formed of or include at least one of SiON, SiCN, SiCON, or SiN.

The first interlayered insulating layer 140 may be provided on thesubstrate 100. The first interlayered insulating layer 140 may beprovided to cover the gate spacers GS and the first and secondsource/drain regions SD1 and SD2. The first interlayered insulatinglayer 140 may have a top surface that is substantially coplanar withthose of the gate capping patterns GP and the gate spacers GS. An etchstop layer ESL may be interposed between the gate spacers GS and thefirst interlayered insulating layer 140. The second interlayeredinsulating layer 150 may be formed on the first interlayered insulatinglayer 140 to cover the gate capping patterns GP. As an example, thefirst and second interlayered insulating layers 140 and 150 may beformed of or include a silicon oxide layer. The etch stop layer ESL maybe formed of or include a silicon nitride layer.

In addition, at least one contact pattern AC, which penetrates the firstand second interlayered insulating layers 140 and 150 and iselectrically connected to the first and second source/drain regions SD1and SD2, may be provided between a pair of the gate electrodes GE. As anexample, each of the contact patterns AC may be connected to a pluralityof source/drain regions SD1 and SD2. As another example, although notshown, at least one contact pattern AC may be connected to one thesource/drain regions SD1 and SD2, but the present disclosure is notlimited thereto.

Each of the contact patterns AC may include a conductive pillar 165 anda barrier layer 160, which is provided to enclose the conductive pillar165. The barrier layer 160 may be provided to cover side and bottomsurfaces of the conductive pillar 165. The conductive pillar 165 mayinclude at least one of metallic materials (e.g., aluminum, copper,tungsten, molybdenum, and cobalt). The barrier layer 160 may include ametal layer and a metal nitride layer. The metal layer may include atleast one of titanium, tantalum, tungsten, nickel, cobalt, or platinum.The metal nitride layer may include at least one of titanium nitride(TiN), tantalum nitride (TaN), tungsten nitride (WN), nickel nitride(NiN), cobalt nitride (CoN), or platinum nitride (PtN).

Metal silicide layers SC may be interposed between the first and secondsource/drain regions SD1 and SD2 and the contact patterns AC. Thecontact patterns AC may be electrically connected to the first andsecond source/drain regions SD1 and SD2 through the metal silicidelayers SC. The metal silicide layers SC may be formed of or include atleast one of metal silicides (e.g., titanium silicide, tantalumsilicide, tungsten silicide, nickel silicide, or cobalt silicide).

Contact spacers CS may be interposed between the contact patterns AC andthe first and second interlayered insulating layers 140 and 150. Each ofthe contact spacers CS may be provided to cover a side surface of eachof the contact patterns AC. Top surfaces of the contact spacers CS maybe substantially coplanar with a top surface of the second interlayeredinsulating layer 150 and top surfaces of the contact patterns AC. Bottomsurfaces of the contact spacers CS may be higher than those of thecontact patterns AC. As an example, the bottom surfaces of the contactspacers CS may contact top surfaces of the first and second source/drainregions SD1 and SD2.

The first source/drain regions SD1 will be described in more detail withreference to FIGS. 2A, 2D, and 3. The first source/drain regions SD1 maybe provided to fill recess regions RS, which are formed in an upperportion of the first active pattern AP1. When measured in the firstdirection D1, the first source/drain region SD1 may have the maximumwidth W1, at a first level LV1 between the top surface of the firstchannel region CH1 and the bottom surface of the first source/drainregion SD1.

Each of the first source/drain regions SD1 may include a firstsemiconductor pattern SP1, a second semiconductor pattern SP2, a thirdsemiconductor pattern SP3, and a fourth semiconductor pattern SP4. Thefirst semiconductor pattern SP1 may be provided to cover an inner sidesurface of the recess region RS. When viewed in the second direction D2,the first semiconductor pattern SP1 may have a ‘U’-shaped verticalsection. As an example, the first semiconductor pattern SP1 may beconformally formed to have a uniform thickness on the inner side surfaceof the recess region RS.

The second semiconductor pattern SP2 may be provided on the firstsemiconductor pattern SP1. The second semiconductor pattern SP2 may beprovided to cover an inner side surface of the first semiconductorpattern SP1. When viewed in the second direction D2, the secondsemiconductor pattern SP2 may have a ‘U’-shaped vertical section. Athickness of the second semiconductor pattern SP2 adjacent to a bottomof the recess region RS may be larger than that of the firstsemiconductor pattern SP1. In some embodiments, when viewed in the firstdirection D1, a thickness of the second semiconductor pattern SP2gradually decreases from a bottom of the recess region RS to an upperportion of the recess region RS. For example, as illustrated in FIG. 3,a thickness t1 of the second semiconductor pattern SP2 adjacent to abottom of the recess region RS may be larger than a thickness t2 of thesemiconductor pattern SP2 adjacent to upper portion of the recess regionRS.

The third semiconductor pattern SP3 may be provided on the secondsemiconductor pattern SP2. The third semiconductor pattern SP3 may beprovided to fill the recess region RS. The third semiconductor patternSP3 may have a larger volume than each of the first, second and fourthsemiconductor patterns SP1, SP2, and SP4.

The fourth semiconductor pattern SP4 may be provided on the thirdsemiconductor pattern SP3. The fourth semiconductor pattern SP4 may beprovided to conformally cover an exposed surface of the thirdsemiconductor pattern SP3.

Each of the first to third semiconductor patterns SP1, SP2, and SP3 mayinclude a semiconductor material having a lattice constant greater thanthat of the substrate 100. For example, in some embodiments, thesubstrate 100 may include silicon (Si), and each of the first to thirdsemiconductor patterns SP1, SP2, and SP3 may include silicon-germanium(SiGe). A lattice constant of germanium (Ge) may be larger than that ofsilicon (Si).

The first semiconductor pattern SP1 may be interposed between thesubstrate 100 and the second semiconductor pattern SP2 and may be usedas a buffer layer. The first semiconductor pattern SP1 may contain arelatively low concentration of germanium (Ge), the third semiconductorpattern SP3 may contain a relatively high concentration of germanium(Ge), and the second semiconductor pattern SP2 may contain aconcentration of germanium (Ge) between the concentration of germanium(Ge) of the first semiconductor pattern SP1 and the concentration ofgermanium (Ge) of the third semiconductor pattern SP3. As an example, acontent (e.g., an atomic percentage or concentration) of germanium (Ge)in the first semiconductor pattern SP1 may range from 15 at % to 25 at%. A content (e.g., anatomic percentage or concentration) of germanium(Ge) in the second semiconductor pattern SP2 may be higher than that inthe first semiconductor pattern SP1. As an example, the content (e.g.,atomic percentage or concentration) of germanium (Ge) in the secondsemiconductor pattern SP2 may range from 25 at % to 50 at %. A content(e.g., atomic percentage or concentration) of germanium (Ge) in thethird semiconductor pattern SP3 may be higher than that in the secondsemiconductor pattern SP2. As an example, the content (e.g., atomicpercentage or concentration) of germanium (Ge) in the thirdsemiconductor pattern SP3 may range from 50 at % to 75 at %.

The fourth semiconductor pattern SP4 may serve as a capping layer forprotecting the third semiconductor pattern SP3. The fourth semiconductorpattern SP4 may include the same semiconductor element as that of thesubstrate 100. In some embodiments, the fourth semiconductor pattern SP4may include a silicon pattern with a single crystalline structure. Acontent (e.g., atomic percentage or concentration) of silicon (Si) inthe fourth semiconductor pattern SP4 may range from 95 at % to 100 at %.

A first contact hole ACH1 may be formed in the third semiconductorpattern SP3. A bottom of the first contact hole ACH1 may be positionedat a second level LV2. When measured in the third direction D3, thesecond level LV2 may be higher than the first level LV1. A metalsilicide layer SC may be provided in the third semiconductor patternSP3. The metal silicide layer SC may be positioned below the firstcontact hole ACH1.

The contact pattern AC may be provided in the first contact hole ACH1. Aside surface of the contact pattern AC may contact an inner side surfaceof the third semiconductor pattern SP3. A bottom surface of the contactpattern AC may contact a top surface of the metal silicide layer SC. Forexample, a side surface of the barrier layer 160 of the contact patternAC may contact an inner side surface of the third semiconductor patternSP3 and a bottom surface of the barrier layer 160 of the contact patternAC may contact a top surface of the metal silicide layer SC. The bottomsurface of the contact pattern AC (e.g., the bottom surface of barrierlayer 160) may be positioned at the second level LV2. The bottom surfaceof the contact pattern AC may be positioned at a lower level than thatof the gate dielectric patterns GI. The bottom surface of the contactpattern AC may be positioned at a lower level than that of the topsurface of the first channel regions CH1. The contact pattern AC may bespaced apart from the first and second semiconductor patterns SP1 andSP2.

The third semiconductor pattern SP3 may contain gallium (Ga) asimpurities. A concentration of gallium (Ga) in the third semiconductorpattern SP3 may decrease in a direction from the contact pattern AC andthe metal silicide layer SC toward the second semiconductor pattern SP2.In some embodiments, segregation of gallium (Ga) may occur due to themetal silicide layer SC, and a concentration of gallium (Ga) mayincrease in a direction toward the metal silicide layer SC. As anexample, a concentration of gallium (Ga) in the third semiconductorpattern SP3 may range from 1.0 E20/cm³ to 1.0 E22/cm³.

In a silicon-germanium (SiGe) layer, gallium (Ga) may have relativelyhigh solubility. As an example, in the silicon-germanium (SiGe), thesolubility of gallium (Ga) may be higher than the solubility of boron(B). Furthermore, as described above, the segregation of gallium (Ga)may occur in the third semiconductor pattern SP3. In some embodiments,since the third semiconductor pattern SP3 in contact with the contactpattern AC contains a relatively high doping concentration of gallium(Ga), electric resistance between the contact pattern AC and the firstsource/drain region SD1 may be lowered.

According to conventional semiconductor device where the contact patternAC is formed to have the bottom surface located below the first levelLV1 (e.g., below a level where the source/drain region SD1 has a maximumwidth in the first direction D1), a volume of the first source/drainregion SD1 may be reduced. This may lead to difficulty in applying asufficiently large compressive stress to the first channel region CH1.By contrast, according to some embodiments of the present disclosure,since the bottom surface of the contact pattern AC is formed at thesecond level LV2 higher than the first level LV1 (e.g., higher than alevel where the source/drain region SD1 has a maximum width in the firstdirection D1), it may be possible to apply a sufficiently largecompressive stress to the first channel region CH1.

In some embodiments, the bottom surface of the contact pattern AC may bepositioned adjacent to the first level LV1. Since the first source/drainregion SD1 at the first level LV1 has the maximum width W1 (e.g., in theD1 direction), a contact area between the contact pattern AC and thefirst source/drain region SD1 may be relatively increased. Thus,electric resistance between the contact pattern AC and the firstsource/drain region SD1 may be reduced.

FIGS. 4, 6, 8, 10, 12, 14, 16, and 18 are plan views illustrating amethod of fabricating a semiconductor device, according to someembodiments of the present disclosure. FIGS. 5A, 7A, 9A, 11A, 13A, 15A,17A, and 19A are cross-sectional views taken along lines A-A′ of FIGS.4, 6, 8, 10, 12, 14, 16, and 18, respectively. FIGS. 5B, 7B, 9B, 11B,13B, 15B, 17B, and 19B are cross-sectional views taken along lines B-B′of FIGS. 4, 6, 8, 10, 12, 14, 16, and 18, respectively. FIGS. 7C, 9C,11C, 13C, 15C, 17C, and 19C are cross-sectional views taken along linesC-C′ of FIGS. 6, 8, 10, 12, 14, 16, and 18, respectively. FIGS. 9D, 11D,13D, 15D, 17D, and 19D are cross-sectional views taken along lines C-C′of FIGS. 8, 10, 12, 14, 16, and 18, respectively. FIG. 20 is a flowchart of a gallium doping process according to some embodiments of thepresent disclosure.

Referring to FIGS. 4, 5A, and 5B, the substrate 100 may be patterned toform the first and second active patterns AP1 and AP2. For example, theformation of the first and second active patterns AP1 and AP2 mayinclude forming mask patterns on the substrate 100, and anisotropicallyetching the substrate 100 using the mask patterns as an etch mask. Firsttrenches TR1 may be formed between the first active patterns AP1. Secondtrenches TR2 may be formed between the second active patterns AP2. Thesubstrate 100 may be or include a semiconductor wafer, which is made ofat least one of silicon, germanium, silicon-germanium, or semiconductorcompound. As an example, the substrate 100 may be a silicon wafer.

The device isolation layers ST may be formed to fill the first andsecond trenches TR1 and TR2. For example, an insulating layer (e.g., asilicon oxide layer) may be formed to fill all of the first and secondtrenches TR1 and TR2. Thereafter, the insulating layer may be recessedto expose upper portions of the first and second active patterns AP1 andAP2. The first active patterns AP1 may constitute the PMOSFET region PR,and the second active patterns AP2 may constitute the NMOSFET region NR.

Referring to FIG. 6 and FIGS. 7A to 7C, sacrificial patterns PP may beformed to cross the first and second active patterns AP1 and AP2. Eachof the sacrificial patterns PP may be a line- or bar-shaped structureextending in the first direction D1. For example, the formation of thesacrificial patterns PP may include forming a sacrificial layer on thesubstrate 100, forming hard mask patterns 145 on the sacrificial layer,and patterning the sacrificial layer using the hard mask patterns 145 asan etch mask. The sacrificial layer may be formed of or include apoly-silicon layer.

A pair of the gate spacers GS may be formed on opposite side surfaces ofeach of the sacrificial patterns PP. The formation of the gate spacersGS may include conformally forming a spacer layer on the substrate 100and anisotropically etching the spacer layer. The spacer layer may beformed of or include at least one of SiCN, SiCON, or SiN. In certainembodiments, the spacer layer may be a multi-layered structure includingat least two of SiCN, SiCON, or SiN.

Referring to FIG. 8 and FIGS. 9A to 9C, the first source/drain regionsSD1 may be formed at both sides of each of the sacrificial patterns PPon the PMOSFET region PR. In detail, the recess regions RS may be formedby etching upper portions of the first active patterns AP1, and duringthe formation of the recess regions RS, the hard mask patterns 145 andthe gate spacers GS may be used as an etch mask. A selective epitaxialgrowth process may be performed to form the first source/drain regionsSD1, and inner side surfaces of the recess regions RS of the firstactive patterns AP1 may be used as a seed layer in the selectiveepitaxial growth process. As a result of the formation of the firstsource/drain regions SD1, a first channel region CH1 may be definedbetween a pair of the first source/drain regions SD1. As an example, theselective epitaxial growth process may include a chemical vapordeposition (CVD) process or a molecular beam epitaxy (MBE) process.

The first source/drain regions SD1 may include a second semiconductorelement whose lattice constant is greater than a first semiconductorelement of the substrate 100. For example, the first semiconductorelement may be silicon, and the second semiconductor element may begermanium. Each of the first source/drain regions SD1 may be amulti-layered structure including a plurality of semiconductor layers.

Each of the first source/drain regions SD1 may include first to fourthsemiconductor patterns SP1-SP4, which are sequentially formed on thesubstrate 100. The first semiconductor pattern SP1 may be formed by afirst selective epitaxial growth process, in which an inner side surfaceof the recess region RS of the first active pattern AP1 is used as aseed layer. The first semiconductor pattern SP1 may contain a lowconcentration of the second semiconductor element. The firstsemiconductor pattern SP1 may be doped with the low concentration ofimpurities, in an in-situ doping manner. Alternatively, the firstsemiconductor pattern SP1 may be doped with the low concentration ofimpurities, after the formation of the first semiconductor pattern SP1.In some embodiments, the first semiconductor pattern SP1 may includesilicon-germanium (SiGe) doped with boron. The atomic percentage ofgermanium (Ge) in the first semiconductor pattern SP1 may range from 15at % to 25 at %.

The first selective epitaxial growth process may be performed at apressure that is higher than those in second and third selectiveepitaxial growth processes. As an example, the first selective epitaxialgrowth process may be performed at a pressure ranging from 50 Torr to250 Torr. Accordingly, the first semiconductor pattern SP1 may beconformally formed on an inner side surface of the recess region RS.

The second semiconductor pattern SP2 may be formed by a second selectiveepitaxial growth process, in which the first semiconductor pattern SP1is used as a seed layer. The second semiconductor pattern SP2 maycontain the second semiconductor element, whose concentration is higherthan that of the first semiconductor pattern SP1. The secondsemiconductor pattern SP2 may be doped with a high concentration ofimpurities in an in-situ doping manner (e.g., without a vacuum break andin the same chamber in which the first semiconductor pattern SP1 wasformed). Alternatively, after the formation of the first semiconductorpattern SP1, the second semiconductor pattern SP2 may be doped with ahigh concentration of impurities (e.g. in a non-in-situ process). As anexample, the second semiconductor pattern SP2 may includesilicon-germanium (SiGe) doped with boron (B). The atomic percentage ofgermanium (Ge) in the second semiconductor pattern SP2 may range from 25at % to 50 at %.

The second selective epitaxial growth process may be performed at apressure lower than that of the first selective epitaxial growthprocess. As an example, the second selective epitaxial growth processmay be performed at a pressure ranging from 10 Torr to 50 Torr.Accordingly, a thickness of the second semiconductor pattern SP2 may besmaller on a side portion of an inner surface of the first semiconductorpattern SP1 than on a bottom portion of the inner surface of the firstsemiconductor pattern SP1. The thickness of the second semiconductorpattern SP2 on the inner bottom surface of the first semiconductorpattern SP1 may be greater than a thickness of the first semiconductorpattern SP1.

The third semiconductor pattern SP3 may be formed by a third selectiveepitaxial growth process, in which the second semiconductor pattern SP2is used as a seed layer. The third semiconductor pattern SP3 may containthe second semiconductor element whose concentration is higher than thesecond semiconductor pattern SP2. The third semiconductor pattern SP3may be doped in an in-situ manner and may have a concentration lowerthan that of the second semiconductor pattern SP2. As an example, thethird semiconductor pattern SP3 may include silicon-germanium (SiGe)doped with boron in an in-situ manner. The atomic percentage ofgermanium (Ge) in the third semiconductor pattern SP3 may range from 50at % to 75 at %.

The third selective epitaxial growth process may be performed at apressure lower than that of the first selective epitaxial growthprocess. As an example, the third selective epitaxial growth process maybe performed at a pressure ranging from 10 Torr to 50 Torr.

The fourth semiconductor pattern SP4 may be formed by a fourth selectiveepitaxial growth process, in which the third semiconductor pattern SP3is used as a seed layer. The fourth semiconductor pattern SP4 maycontain the first semiconductor element that is of the same kind as thatin the substrate 100. As an example, the fourth semiconductor patternSP4 may include a silicon pattern with a single crystalline structure.The first to fourth selective epitaxial growth processes may besequentially performed in the same chamber.

The second source/drain regions SD2 may be formed at both sides (e.g.,opposite sides) of each of the sacrificial patterns PP on the NMOSFETregion NR. In detail, recess regions may be formed by etching upperportions of the second active patterns AP2, and during the formation ofthe recess regions, the hard mask patterns 145 and the gate spacers GSmay be used as an etch mask. A selective epitaxial growth process, inwhich inner side surfaces of the recess regions of the second activepatterns AP2 are used as a seed layer, may be performed to form thesecond source/drain regions SD2. As a result of the formation of thesecond source/drain regions SD2, a second channel region CH2 may bedefined between a pair of the second source/drain regions SD2. As anexample, the second source/drain regions SD2 may include silicon.

The first source/drain regions SD1 and the second source/drain regionsSD2 may be sequentially formed by different processes. For example, thefirst source/drain regions SD1 and the second source/drain regions SD2may not be formed at the same time.

The etch stop layer ESL may be conformally formed on the substrate 100.The etch stop layer ESL may cover the first and second source/drainregions SD1 and SD2. The etch stop layer ESL may be formed of or includea silicon nitride layer.

Referring to FIG. 10 and FIGS. 11A to 11D, the first interlayeredinsulating layer 140 may be formed to cover the first and secondsource/drain regions SD1 and SD2, the hard mask patterns 145, and thegate spacers GS. As an example, the first interlayered insulating layer140 may be formed of or include a silicon oxide layer.

Thereafter, the first interlayered insulating layer 140 may beplanarized to expose the top surfaces of the sacrificial patterns PP.The planarization of the first interlayered insulating layer 140 may beperformed using an etch-back or chemical mechanical polishing (CMP)process. During the planarization process, all of the hard mask patterns145 may be removed. As a result, the first interlayered insulating layer140 may have a top surface that is coplanar with the top surfaces of thesacrificial patterns PP and the gate spacers GS. In some embodiments,the exposed sacrificial patterns PP may be selectively removed. As aresult of the removal of the sacrificial patterns PP, empty spaces ESmay be formed.

Referring to FIG. 12 and FIGS. 13A to 13D, the gate dielectric patternGI, the gate electrode GE, and the gate capping pattern GP may be formedin each of the empty spaces ES. The gate dielectric pattern GI may beconformally formed, and thus, the whole region of the empty space ES maynot be filled with the gate dielectric pattern GI. The gate dielectricpattern GI may be formed by an atomic layer deposition (ALD) process ora chemical oxidation process. The gate dielectric pattern GI may beformed of or include a high-k dielectric material. For example, thehigh-k dielectric material may be formed of or include at least one ofhafnium oxide, hafnium silicon oxide, lanthanum oxide, zirconium oxide,zirconium silicon oxide, tantalum oxide, titanium oxide, bariumstrontium titanium oxide, barium titanium oxide, strontium titaniumoxide, lithium oxide, aluminum oxide, lead scandium tantalum oxide, orlead zinc niobate.

The formation of the gate electrode GE may include forming a gateelectrode layer to completely fill the empty space ES and thenplanarizing the gate electrode layer. As an example, the gate electrodelayer may be formed of or include at least one of conductive metalnitrides (e.g., titanium nitride or tantalum nitride) or metals (e.g.,titanium, tantalum, tungsten, copper, or aluminum).

Thereafter, upper portions of the gate electrodes GE may be recessed.The gate capping patterns GP may be formed on the gate electrodes GE.The gate capping patterns GP may be formed to completely fill recessedregions of the gate electrodes GE. The gate capping patterns GP may beformed of or include at least one of SiON, SiCN, SiCON, or SiN.

Referring to FIG. 14 and FIGS. 15A to 15D, the second interlayeredinsulating layer 150 may be formed on the first interlayered insulatinglayer 140 and the gate capping patterns GP. The second interlayeredinsulating layer 150 may be formed of or include a silicon oxide layeror a low-k oxide layer. The low-k oxide layer may include, for example,a carbon-doped silicon oxide layer such as SiCOH. The secondinterlayered insulating layer 150 may be formed by a CVD process.

First and second contact holes ACH1 and ACH2 may be formed to penetratethe second interlayered insulating layer 150 and the first interlayeredinsulating layer 140 and to expose the first and second source/drainregions SD1 and SD2, respectively. In some embodiments, the first andsecond contact holes ACH1 and ACH2 may be formed by selectively etchingonly the first and second interlayered insulating layers 140 and 150.During the etching process, the etch stop layer ESL may be used toprotect the first and second source/drain regions SD1 and SD2. The etchstop layer ESL covering the first and second source/drain regions SD1and SD2 may be removed during the etching process.

The first contact holes ACH1 may be formed to expose upper portions ofthe first source/drain regions SD1, and the second contact holes ACH2may be formed to expose upper portions of the second source/drainregions SD2. As an example, the first and second contact holes ACH1 andACH2 may be self-align contact holes that are formed in self-alignedmanner by the gate capping patterns GP and the gate spacers GS.

Referring to FIG. 16, FIGS. 17A to 17D, and FIG. 20, a contact spacerlayer CSL may be conformally formed on the substrate 100. The contactspacer layer CSL may be formed to cover side and bottom surfaces of thefirst and second contact holes ACH1 and ACH2. As an example, the contactspacer layer CSL may be formed of or include at least one of SiCN,SiCON, or SiN. The mask pattern MP may be formed to cover the NMOSFETregion NR. The mask pattern MP may be formed to selectively expose thePMOSFET region PR.

An ion implantation process IIP may be performed to dope the entire topsurface of the substrate 100 with gallium (Ga) (in S100). As a result ofthe ion implantation process IIP, the upper portions of the firstsource/drain regions SD1 may be doped with gallium (Ga). In detail, thethird semiconductor patterns SP3 of the first source/drain regions SD1may be doped with gallium (Ga). Meanwhile, the second source/drainregions SD2 may be prevented from being doped with gallium (Ga) by themask pattern MP. For example, the second source/drain regions SD2 may begallium-free region.

As an example, the ion implantation process IIP may be performed at adose ranging from 1.0 E14/cm² to 1.0 E16/cm² and at a power ranging from1 keV to 10 keV. The ion implantation process IIP may be performed at alow temperature (e.g., from −100° C. to 0° C.), a middle temperature(e.g., from 0° C. to 100° C.), or a high temperature (e.g., from 100° C.to 500° C.). A process condition of the ion implantation process IIP maynot be particularly limited to a specific one and may be adaptivelyselected by the skilled person in the art. In a silicon-germanium (SiGe)layer, gallium (Ga) may have relatively high solubility. Accordingly,the third semiconductor patterns SP3 of the first source/drain regionsSD1 may contain a relatively high concentration of gallium (Ga).

A first annealing process may be performed on the first source/drainregions SD1 doped with gallium (Ga) (in S200). The gallium (Ga) doped bythe first annealing process may be diffused into the first source/drainregions SD1. In detail, the first annealing process may be performed fora period of milliseconds or nanoseconds. As an example, the firstannealing process may be a low-temperature soak annealing process, aflash lamp annealing process, a laser annealing process, or a spikeannealing process. Meanwhile, the contact spacer layer CSL may be usedto prevent amorphization of the first source/drain regions SD1, whichmay be caused by the first annealing process, and to prevent the dopedgallium (Ga) from being lost.

Referring to FIG. 18 and FIGS. 19A to 19D, the mask pattern MP may beremoved. The contact spacer layer CSL may be anisotropically etched toform the contact spacers CS. During the anisotropic etching process,upper portions of the first and second source/drain regions SD1 and SD2may be over-etched. For example, the contact spacer layer CSL on thefirst and second source/drain regions SD1 and SD2 may be removed, andthen, the upper portions of the first and second source/drain regionsSD1 and SD2 may be etched. Accordingly, the first and second contactholes ACH1 and ACH2 may be further extended toward a bottom surface ofthe substrate 100. Bottom surfaces of the first and second contact holesACH1 and ACH2 may be higher than the first level LV1, at which the firstsource/drain region SD1 has the maximum width W1 (e.g., see FIGS. 2D and3).

Referring back to FIG. 1 and FIGS. 2A to 2D, the contact patterns AC maybe formed in the first and second contact holes ACH1 and ACH2 to be incontact with the first and second source/drain regions SD1 and SD2. Themetal silicide layers SC may be formed between the contact patterns ACand the first and second source/drain regions SD1 and SD2. Each of thecontact patterns AC may include the conductive pillar 165 and thebarrier layer 160 enclosing the conductive pillar 165.

In detail, the barrier layer 160 may be formed to partially fill thefirst and second contact holes ACH1 and ACH2. The barrier layer 160 mayinclude a metal layer and a metal nitride layer. The metal layer mayinclude at least one of titanium, tantalum, tungsten, nickel, cobalt, orplatinum. The metal nitride layer may include at least one of titaniumnitride (TiN), tantalum nitride (TaN), tungsten nitride (WN), nickelnitride (NiN), cobalt nitride (CoN), or platinum nitride (PtN).Thereafter, a second annealing process may be performed on the substrate100 to form the metal silicide layers SC. During the second annealingprocess, a metallic element of the barrier layer 160 and a semiconductorelement of the first and second source/drain regions SD1 and SD2 mayreact with each other, thereby forming the metal silicide layers SC. Thesecond annealing process may be performed for long time, compared withthe first annealing process, and in certain embodiments, the secondannealing process may be a rapid thermal annealing process. The metalsilicide layers SC may be formed of or include at least one of metalsilicides (e.g., titanium silicide, tantalum silicide, tungstensilicide, nickel silicide, or cobalt silicide).

During the formation of the metal silicide layer SC, segregation ofgallium (Ga) may occur in the third semiconductor pattern SP3 in contactwith the metal silicide layer SC. Accordingly, the third semiconductorpattern SP3 may contain a relatively high concentration of gallium (Ga).

A conductive layer may be formed to fully fill the first and secondcontact holes ACH1 and ACH2. The conductive layer may be planarized toexpose the top surface of the second interlayered insulating layer 150,and as a result of the planarization process, the conductive pillar 165may be formed. The conductive pillar 165 may include at least one ofmetallic materials (e.g., aluminum, copper, tungsten, molybdenum, andcobalt).

In some embodiments, the contact pattern AC may be formed to be incontact with the third semiconductor pattern SP3 containing therelatively high concentration of gallium (Ga). Thus, electric resistancebetween the contact pattern AC and the first source/drain region SD1 maybe reduced.

In certain embodiments, the first annealing process S200 may beperformed after the formation of the barrier layer 160. For example, thefirst and second annealing processes may be sequentially performed afterthe formation of the barrier layer 160.

FIG. 21 is a plan view illustrating a method of fabricating asemiconductor device according to some embodiments of the presentdisclosure. FIGS. 22A to 22D are cross-sectional views taken along linesA-A′, B-B′, C-C′, and D-D′, respectively, of FIG. 21. For concisedescription, an element or step previously described with reference toFIGS. 4 to 20 may be identified by a similar or identical referencenumber without repeating an overlapping description thereof.

Referring to FIGS. 20, 21, and 22A to 22D, the mask pattern MP may beformed on the structure of FIG. 8 and FIGS. 9A to 9D to cover theNMOSFET region NR. The mask pattern MP may be formed to selectivelyexpose the PMOSFET region PR. An ion implantation process IIP may beperformed to dope the entire top surface of the substrate 100 withgallium (Ga) (in S100). As a result of the ion implantation process IIP,the third semiconductor patterns SP3 of the first source/drain regionsSD1 may be doped with gallium (Ga). In this exemplary embodiment, thedoping of gallium (Ga) into the first source/drain regions SD1 may beperformed before the formation of the gate electrode GE.

FIG. 23 is a plan view illustrating a method of fabricating asemiconductor device according to some embodiments of the presentdisclosure. FIGS. 24A to 24D are cross-sectional views taken along linesA-A′, B-B′, C-C′, and D-D′, respectively, of FIG. 21. For concisedescription, an element or step previously described with reference toFIGS. 4 to 20 may be identified by a similar or identical referencenumber without repeating an overlapping description thereof.

Referring to FIGS. 20, 23, and 24A to 24D, the second source/drainregions SD2 may be formed in upper portions of the second activepatterns AP2, as previously described with reference to FIG. 8 and FIGS.9A to 9D. The mask pattern MP may be formed to cover the NMOSFET regionNR. The first source/drain regions SD1 may be formed on the PMOSFETregion PR exposed by the mask pattern MP.

During the formation of the first source/drain regions SD1, an ionimplantation process IIP may be performed in an in-situ manner (inS100). In some embodiments, the ion implantation process IIP may beperformed to uniformly dope the third semiconductor pattern SP3 withgallium (Ga). According to this exemplary embodiment, the firstsource/drain regions SD1 may be in-situ doped with gallium (Ga) duringits formation.

According to some embodiments of the present disclosure, a method offabricating a semiconductor device is used to reduce electric resistancebetween a contact pattern and a source/drain region. Accordingly, it maybe possible to improve a speed and electric characteristics of asemiconductor device.

While example embodiments of the present disclosure have beenparticularly shown and described, it will be understood by one ofordinary skill in the art that variations in form and detail may be madetherein without departing from the spirit and scope of the attachedclaims.

What is claimed is:
 1. A semiconductor device, comprising: a firstactive pattern on a PMOSFET region of a substrate, the substrateincluding a semiconductor element having a first lattice constant; agate electrode crossing the first active pattern and extending in afirst direction; a first source/drain region provided in the firstactive pattern at a side of the gate electrode; and a first contactpattern coupled to the first source/drain region, wherein the firstsource/drain region includes a semiconductor element having a secondlattice constant larger than the first lattice constant, an upperportion of the first source/drain region includes gallium (Ga) as animpurity, and a concentration of gallium in the first source/drainregion decreases in a direction from the first contact pattern toward alower portion of the first source/drain region.
 2. The semiconductordevice of claim 1, further comprising: a second active pattern on anNMOSFET region of the substrate; a second source/drain region providedin an upper portion of the second active pattern at a side of the gateelectrode; and a second contact pattern coupled to the secondsource/drain region, wherein the second source/drain region is agallium-free region.
 3. The semiconductor device of claim 1, wherein aconcentration of gallium in the upper portion of the first source/drainregion ranges from 1.0 E20/cm³ to 1.0 E22/cm³.
 4. The semiconductordevice of claim 1, wherein the substrate includes silicon (Si), thefirst source/drain region includes silicon-germanium (SiGe), the firstsource/drain region comprises a first semiconductor pattern, a secondsemiconductor pattern on the first semiconductor pattern, and a thirdsemiconductor pattern on the second semiconductor pattern, the first,second and third semiconductor patterns fill a recess region formed inthe first active pattern, an atomic percentage of germanium (Ge) in thesecond semiconductor pattern is higher than an atomic percentage ofgermanium (Ge) in the first semiconductor pattern, an atomic percentageof germanium (Ge) in the third semiconductor pattern is higher than theatomic percentage of germanium (Ge) in the second semiconductor pattern,and the first contact pattern contacts the third semiconductor patternand is spaced apart from the first and second semiconductor patterns. 5.The semiconductor device of claim 4, wherein a first thickness of thesecond semiconductor pattern adjacent to a bottom of the recess regionis greater than a second thickness of the second semiconductor patternadjacent to an upper portion of the recess region.
 6. The semiconductordevice of claim 1, wherein the first source/drain region has a maximumwidth, when measured in the first direction, at a first level, and abottom surface of the first contact pattern is positioned at a levelthat is higher than the first level and is lower than a top surface ofthe first active pattern.
 7. The semiconductor device of claim 1,further comprising a metal silicide layer between the first contactpattern and the first source/drain region.
 8. The semiconductor deviceof claim 7, wherein the concentration of gallium in the firstsource/drain region is highest in a vicinity of the metal silicidelayer.
 9. The semiconductor device of claim 1, wherein the firstsource/drain region further includes boron (B) as a p-type impurity. 10.The semiconductor device of claim 1, wherein the first active patternhas a fin shape protruding from the substrate.
 11. A semiconductordevice, comprising: an active pattern on a PMOSFET region of asubstrate; a gate electrode crossing the active pattern and extending ina first direction; a source/drain region provided in the active patternat a side of the gate electrode; and a contact pattern coupled to thesource/drain region, wherein an upper portion of the source/drain regionincludes gallium (Ga) as an impurity, the source/drain region has amaximum width, when measured in the first direction, at a first level,and a bottom surface of the contact pattern is positioned at a levelthat is higher than the first level and is lower than a top surface ofthe active pattern.
 12. The semiconductor device of claim 11, wherein aconcentration of gallium in the source/drain region decreases in adirection from the contact pattern toward a lower portion of thesource/drain region.
 13. The semiconductor device of claim 11, wherein aconcentration of gallium in the upper portion of the source/drain regionranges from 1.0 E20/cm³ to 1.0 E22/cm³.
 14. The semiconductor device ofclaim 11, further comprising a metal silicide layer between the contactpattern and the source/drain region.
 15. The semiconductor device ofclaim 14, wherein a concentration of gallium in the source/drain regionis highest in a vicinity of the metal silicide layer.
 16. Asemiconductor device, comprising: an active fin on a PMOSFET region of asubstrate; a gate electrode crossing the active fin and extending in afirst direction; a source/drain region provided in the active fin at aside of the gate electrode; a contact pattern coupled to thesource/drain region; and a metal silicide layer between the contactpattern and the source/drain region, wherein the source/drain regionincludes gallium (Ga) as an impurity, and a concentration of gallium inthe source/drain region decreases in a direction away from the metalsilicide layer.
 17. The semiconductor device of claim 16, wherein theconcentration of gallium in the source/drain region decreases in adirection from the metal silicide layer toward a bottom of thesource/drain region.
 18. The semiconductor device of claim 16, whereinthe concentration of gallium in the source/drain region ranges from 1.0E20/cm³ to 1.0 E22/cm³.
 19. The semiconductor device of claim 16,wherein the source/drain region has a maximum width, when measured inthe first direction, at a first level, and a bottom surface of thecontact pattern is positioned at a level that is higher than the firstlevel and is lower than a top surface of the active fin.
 20. Thesemiconductor device of claim 16, wherein the source/drain regionfurther includes boron (B) as a p-type impurity.